Electronics

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Onfnen1995

Engineering

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Page 2 of 5 1) (12 points) The built-in voltage of a silicon pn junction is 0.675 V at T = 300 K. The concentration of acceptor atoms in the p-region is 10'7cm?. Determine the concentration of donor atoms in the n-region. 2) (13 points) In the circuit shown below, Vps varies between 11.5 and 14.2 V, V2= 3.9 V, and I, varies between 25 and 250 mA. Assuming that Iz(min) = 0.1 Iz(max), determine the required value of R; and the required power rating for the diode. R 4 M Vps R Page 3 of 5 3) (12 points) The parameters of the diodes in the circuit below are V,= 0.7 V and r=0. Sketch a graph of the voltage transfer characteristics of the circuit. Indicate values of all important voltages in the graph. Vio O vo D D 4 ke 2 5 V 9V 4) (13 points) For the transistor in the circuit shown below, Vbe(on) = 0.7 V, V CE(sat) = 0.2 V, and ß = 75. Determine the value of V, that will cause the voltage of the base to equal the voltage of the collector. Vcc=+10 V Rc620 S2 OV. Rg=20 k2 Vio Page 4 of 5 5) (12 points) For the transistor in the circuit below, VA = 125 V and B = 95. The transistor's temperature is 300 K, its quiescent base current is 0.004 mA, and the capacitors have negligible impedance at signal frequencies. Determine the small- signal voltage gain for the circuit. SR=27k22 Ονο not R=90 kΩ 1 SR=75 k2 VEE 6) (13 points) An n-channel MOSFET has parameters Vrn=0.75 V, W = 40 um, L = 4 um, tox = 450 Å, and un= 650 cm /V-s. Determine the value of the drain current if the transistor is biased in the saturation region and VGS = 2 VIN. Page 5 of 5 7) (12 points) For the transistor in the circuit shown below, Vrn = 0.8 V and K = 0.5 mA/V2. Determine the values of Vgs and Id. Vop=5 V R,=16 k 2 Ro=4k12 M R,=9 ΚΩ Rs=2 k2 Vss=-5 V 8) (13 points) For the transistor in the circuit shown below, Vin = 0.8 V, 1 = 0, and K, = 0.25 mA/V2. Determine the small-signal voltage gain of the circuit. op= +5 V R, =600 k 2 Ro=5 k12 Cai v, ode Vo Cc2 R, -400 k 2
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Anonymous
Really great stuff, couldn't ask for more.

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