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Page 2 of 5
1)
(12 points) The built-in voltage of a silicon pn junction is 0.675 V at T = 300 K.
The concentration of acceptor atoms in the p-region is 10'7cm?. Determine the
concentration of donor atoms in the n-region.
2)
(13 points) In the circuit shown below, Vps varies between 11.5 and 14.2 V,
V2= 3.9 V, and I, varies between 25 and 250 mA. Assuming that
Iz(min) = 0.1 Iz(max), determine the required value of R; and the required power
rating for the diode.
R
4
M
Vps
R
Page 3 of 5
3)
(12 points) The parameters of the diodes in the circuit below are V,= 0.7 V and
r=0. Sketch a graph of the voltage transfer characteristics of the circuit.
Indicate values of all important voltages in the graph.
Vio
O
vo
D
D
4 ke 2
5 V
9V
4)
(13 points) For the transistor in the circuit shown below, Vbe(on) = 0.7 V,
V CE(sat) = 0.2 V, and ß = 75. Determine the value of V, that will cause the
voltage of the base to equal the voltage of the collector.
Vcc=+10 V
Rc620 S2
OV.
Rg=20 k2
Vio
Page 4 of 5
5)
(12 points) For the transistor in the circuit below, VA = 125 V and B = 95. The
transistor's temperature is 300 K, its quiescent base current is 0.004 mA, and the
capacitors have negligible impedance at signal frequencies. Determine the small-
signal voltage gain for the circuit.
SR=27k22
Ονο
not
R=90 kΩ
1
SR=75 k2
VEE
6)
(13 points) An n-channel MOSFET has parameters Vrn=0.75 V, W = 40 um,
L = 4 um, tox = 450 Å, and un= 650 cm /V-s. Determine the value of the drain
current if the transistor is biased in the saturation region and VGS = 2 VIN.
Page 5 of 5
7)
(12 points) For the transistor in the circuit shown below, Vrn = 0.8 V and
K = 0.5 mA/V2. Determine the values of Vgs and Id.
Vop=5 V
R,=16 k 2
Ro=4k12
M
R,=9 ΚΩ
Rs=2 k2
Vss=-5 V
8)
(13 points) For the transistor in the circuit shown below, Vin = 0.8 V, 1 = 0, and
K, = 0.25 mA/V2. Determine the small-signal voltage gain of the circuit.
op= +5 V
R, =600 k 2
Ro=5 k12
Cai
v, ode
Vo
Cc2
R, -400 k 2
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