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hello please i need help with this homework and i need explinations thank you from your help and please make sure the answers is not copied from any site thank you i attached the questions down below please make sure i can read your writing

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EEE 335 Spring 2025 HW #1 The problem sets are selected from the textbook A.S. Sedra and K.C. Smith, Microelectronic Circuits, 8th Edition, Oxford University Press. The problem numbers and grading rubric are given below. TOTAL OF 6 PROBLEMS. SHOW YOUR WORK. No points will be awarded to problems that do not show the work/derivation/equations used to arrive at the answer. CHAPTER 5: 5.11. 15 pts 5.14. 16 pts (4 pts each a,b,c,d) 5.17. 12 pts D5.19. 12 pts D5.49. 20 pts 5.55. 25 pts ONLY parts c, d, and g (5 pts for part c, 10 pts each for parts d and g) This homework is graded out of 100 points. Your score out of 100 will then be normalized to 12.5 points on Canvas for 1.25% of your course grade. The problems have been included in the following pages. Problem 5.11: Problem 5.14: Problem 5.17: Problem D5.19: Problem 5.49: Problem 5.55 ONLY parts c, d, and g: Part g is the trickiest one. To solve part g, write the equation for saturation current in terms of V7, and write a second equation for current in terms of VDD, 0.5kW, and V7. Set the two expressions equal to one another and solve the quadratic.
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Explanation & Answer

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1

Chapter 5

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2
Chapter 5
Problem 5.11.
a) The threshold voltage of the p-channel MOSFET is provided as Vtp = - 0.5V.
Therefore, According to MOSFET’s (Metal Oxide Semiconductor Field Effect Transistors),
overdrive voltage is the applied voltage into the transistor’s gate, which is greater than the
needed threshold voltage in switching on the MOSFET.
Hence, the formula for determining overdrive voltage is provided as;
Vov = Vgs – Vth … Equation 1
Provided that the source be connected to the ground i.e.
Vs = 0V
This way, the gate source voltage is written as,
Vgs = Vg – Vs … Equation 2
Substituting overdrive voltage, source voltage and the use of Equation 2 in Equation 1.
Vg – 0 – (-0.5) = 0.4
Vg {Gate Voltage} = -0.1V
b) In this part, saturation in a MOSFET is the specific operating region where there is full
turning on of the transistor that allows for maximum flow of current between its source and
drain terminals.
The condition that would requ...

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