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Name: Masoud Almarri
Instructor: Dr Rj Vinnakota
Date: 03-19-2019
Electronic Devices I Lab
EET 222
BJT Analysis using Simulation
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Objective:
The main objective of this lab is to evaluate the BJT following characteristics using Multisim software:
BJT DC characteristics
BJT switching circuit
BJT common emitter amplifier
Equipment:
Multisim Software
Theory:
The Bipolar Transistor has basic construction which consists of two PN-junctions and three
terminals name as
1 Emitter (E)
2 Base (B)
3 Collector (C)
Figure 1 Schematic diagram of BJT
BJT is three terminal semiconductor device which may work as Electronic switch and linear
amplification mode. There are three basic configuration of BJT amplifier and that are Common
Emitter (CE) Amplifier, Common-Base (CB) Amplifier and Common Collector (CC) Amplifier.
DC characteristics:
Four types of BJT characteristics can be defined for each of the transistor operating
configurations. These characteristics define relationships among DC currents and DC voltages at
the transistor input and output:
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1 Input characteristics Uin (Iin) for UOUT = const.
2 Forward current gain characteristics I out(Iin) for UOUT = const.
3 Reverse voltage gain characteristics Uin(Uout) for Iin = const.
4 Output characteristics I out (Uout) for Iin = const.
In BJT collector current Ic is controlled by the base current Ib. As Ib changed, Ic changes
proportionally
Ic=B Ib
Here B is the Dc base to collector current gain.
Circuit Diagram:
Procedure:
1 Construct the circuit in the Multisim software.
2 Click on the simulate tab in the Simulink after this a open the DC sweep and window will
pop up.
3 Unders source 1 seclect V2 and in the start value put 0v and stop value put 10v also
increment of 0.01.
4 Unders source 2 seclect V1 and in the start value put 0v and stop value put 6v also
increment of 2.
5 After this click on the output and select Ic to add this on window to get results.
6 Run the circuit and obtain the figure that generates after this simulation.
Output:
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