I need u to solve these questions for electrical engineering and the name of the subject is " Electronic mat devices ".

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timer Asked: Nov 27th, 2018

Question Description

I need u to solve these questions and please don't copy from google or any other sites cuz basically I'm going to get zero on this assignment. this subject is electrical engineering subject and its name is " electronic mat & devices ". so please make sure that the answer is totally related to the question, and this is the name of the book so you can check it " Semiconductor Fundamentals Volume 1, Robert F. Pierret

The PN Junction Volume II, Gerold Neudeck " thanks.

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HW 4: Plotting carrier concentrations in forward biased diode and deriving circuit quantities For this exercise, we will use a one-sided p-n diode, with p-side Na=2×1018cm-3, and n-side Nd=2×1016cm3 . For the carrier lifetimes, use 1ns, and the included electron mobility (1000cm2/Vs) and the included hole mobility (400cm2/Vs). 1. 2. 3. 4. 5. 6. 7. 8. 9. Calculate the EQUILIBRIUM minority carrier concentrations on the 2 sides, i.e. pn0 and np0. Calculate the fermi level positions on the 2 sides in the quasi-neutral regions Draw the full band diagram under EQUILIBRIUM Assuming the quasi-neutral regions on the 2 sides are 10x the diffusion length, estimate the series resistances in Ωcm2 on the 2 sides. Draw the band diagram under 0.2V forward bias. Where does this voltage drop? Make sure to indicate the quasi-fermi levels, i.e. how they split under application of voltage. Where is the peak electric field? Plot the carrier distributions and current densities on the 2 sides using the attached Scilab code. At V=-.2V, calculate the DEPLETION region width, and the associated capacitance in F/cm2. Diffusion capacitance extraction) a. Now, calculate the total excess charge in the diffusion induced minority carriers at 0.2V in #/cm2 and C/cm2. Remember to do this for both pn and np. b. Calculate the total excess charge in the diffusion induced minority carriers at 0.26V forward bias in #/cm2 and C/cm2. Remember to do this independently on the 2 sides. c. From the expressions (in the notes) −𝒊𝒏𝒇 ∆𝒏𝒑 (𝒙)𝒅𝒙]/𝒅𝑽 𝑪𝒅𝒊𝒇𝒇𝒖𝒔𝒊𝒐𝒏,𝒑−𝒔𝒊𝒅𝒆 = 𝒒𝒅[∫ −𝒙𝒑 +𝒊𝒏𝒇 𝑪𝒅𝒊𝒇𝒇𝒖𝒔𝒊𝒐𝒏,𝒏−𝒔𝒊𝒅𝒆 = 𝒒𝒅[∫ ∆𝒑𝒏 (𝒙)𝒅𝒙]/𝒅𝑽 +𝒙𝒏 Calculate the diffusion capacitances on the 2 sides in F/cm2. d. Which side has larger diffusion capacitance? e. How does this diffusion capacitance compare with your depletion capacitance? 10. Sketch the equivalent circuit diagram (remember from the notes)? Include Rn, Rp¸Cdepletion, Cdiffusion,n-side and Cdiffusion,pside. 11. Now, perform the integration analytically using the following equations for the carrier distributions we derived in class: 𝑛𝑖2 𝑉𝑎𝑝𝑝𝑙𝑖𝑒𝑑 𝑥 − 𝑥𝑛 ∆𝑝𝑛 (𝑥) = ( ) (exp ( ) − 1) exp⁡(− ) 𝑁𝐷 𝑉𝑡ℎ 𝐿𝑛 𝑥 + 𝑥𝑝 𝑛𝑖2 𝑉𝑎𝑝𝑝𝑙𝑖𝑒𝑑 ∆𝑛𝑝 (𝑥) = ( ) (exp ( ) − 1) exp⁡( ) 𝑁𝐴 𝑉𝑡ℎ 𝐿𝑛 This is actually not so hard. Integral of exponential is exponential, and when exp(-x)→0 as x→inf. HW 4: Plotting carrier concentrations in forward biased diode and deriving circuit quantities For this exercise, we will use a one-sided p-n diode, with p-side Na=2×1018cm-3, and n-side Nd=2×1016cm3 . For the carrier lifetimes, use 1ns, and the included electron mobility (1000cm2/Vs) and the included hole mobility (400cm2/Vs). 1. 2. 3. 4. 5. 6. 7. 8. 9. Calculate the EQUILIBRIUM minority carrier concentrations on the 2 sides, i.e. pn0 and np0. Calculate the fermi level positions on the 2 sides in the quasi-neutral regions Draw the full band diagram under EQUILIBRIUM Assuming the quasi-neutral regions on the 2 sides are 10x the diffusion length, estimate the series resistances in Ωcm2 on the 2 sides. Draw the band diagram under 0.2V forward bias. Where does this voltage drop? Make sure to indicate the quasi-fermi levels, i.e. how they split under application of voltage. Where is the peak electric field? Plot the carrier distributions and current densities on the 2 sides using the attached Scilab code. At V=-.2V, calculate the DEPLETION region width, and the associated capacitance in F/cm2. Diffusion capacitance extraction) a. Now, calculate the total excess charge in the diffusion induced minority carriers at 0.2V in #/cm2 and C/cm2. Remember to do this for both pn and np. b. Calculate the total excess charge in the diffusion induced minority carriers at 0.26V forward bias in #/cm2 and C/cm2. Remember to do this independently on the 2 sides. c. From the expressions (in the notes) −𝒊𝒏𝒇 ∆𝒏𝒑 (𝒙)𝒅𝒙]/𝒅𝑽 𝑪𝒅𝒊𝒇𝒇𝒖𝒔𝒊𝒐𝒏,𝒑−𝒔𝒊𝒅𝒆 = 𝒒𝒅[∫ −𝒙𝒑 +𝒊𝒏𝒇 𝑪𝒅𝒊𝒇𝒇𝒖𝒔𝒊𝒐𝒏,𝒏−𝒔𝒊𝒅𝒆 = 𝒒𝒅[∫ ∆𝒑𝒏 (𝒙)𝒅𝒙]/𝒅𝑽 +𝒙𝒏 Calculate the diffusion capacitances on the 2 sides in F/cm2. d. Which side has larger diffusion capacitance? e. How does this diffusion capacitance compare with your depletion capacitance? 10. Sketch the equivalent circuit diagram (remember from the notes)? Include Rn, Rp¸Cdepletion, Cdiffusion,n-side and Cdiffusion,pside. 11. Now, perform the integration analytically using the following equations for the carrier distributions we derived in class: 𝑛𝑖2 𝑉𝑎𝑝𝑝𝑙𝑖𝑒𝑑 𝑥 − 𝑥𝑛 ∆𝑝𝑛 (𝑥) = ( ) (exp ( ) − 1) exp⁡(− ) 𝑁𝐷 𝑉𝑡ℎ 𝐿𝑛 𝑥 + 𝑥𝑝 𝑛𝑖2 𝑉𝑎𝑝𝑝𝑙𝑖𝑒𝑑 ∆𝑛𝑝 (𝑥) = ( ) (exp ( ) − 1) exp⁡( ) 𝑁𝐴 𝑉𝑡ℎ 𝐿𝑛 This is actually not so hard. Integral of exponential is exponential, and when exp(-x)→0 as x→inf.
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